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| UNISONIC TECHNOLOGIES CO.,LTD 2SC2625 HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability NPN EPITAXIAL SILICON TRANSISTOR 1 TO-3P *Pb-free plating product number: 2SC2625L PIN INFORMATION PIN NO. 1 2 3 PIN NAME Base Collector Emitter ORDERING INFORMATION Order Number Normal Lead free plating 2SC2625-T3P-T 2SC2625L-T3P-T Package TO-3P Packing Tube www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co.,LTD 1 of 3 QW-R214-009,B 2SC2625 PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PD TJ TSTG RATINGS 450 400 400 7 10 3 80 +150 -40 ~ +150 UNIT V V V V A A W ELECTRICAL SPECIFICATIONS (TC =25 , Unless Otherwise Specified) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Switching Time SYMBOL VCBO VCEO VCEO (SUS) VEBO VCE (Sat) VBE (Sat) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=1A IEBO=0.1mA IC=4A, IB=0.8A VCBO=450V VEBO=7V IC=4A, VCE=5V IC=7.5A, IB1=-IB2=1.5A RL=20, Pw=20s, Duty 2% MIN 450 400 400 7 TYP MAX UNIT V V V V V V mA mA s s s 1.2 1.5 1.0 0.1 10 1.0 2.0 1.0 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction to Case SYMBOL JC RATINGS 1.55 UNIT /W SWITCHING TIME TEST CIRCUIT R L=20 IB1 IB2 IB1 IB2 IC 0.9IC IC PW=20 s ton 0.1IC t stg tf UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R214-009,B 2SC2625 TYPICAL CHARACTERISTICS Collector Output Characteristics 14 12 Collector Current, IC (A) NPN EPITAXIAL SILICON TRANSISTOR DC Current Gain 300 200 DC Current Gain, hFE T C=25 A 9 00 m 70 0 mA VCE=5V 100 50 30 10 5 3 1 0.03 0.05 0.1 0.3 0.5 1 3 5 10 T C=120 25 -20 -40 10 8 6 4 2 0 0 2 4 6 5 00 mA 300mA 200mA IB =100mA 8 10 12 14 Collector Emitter Voltage, VCE (V) Base and Collector Saturation Voltage Saturation Voltage, VCE (Sat), VBE (Sat ) (V) Collector Current, I C (A) Safe Operating Area 30 TC=25 10 Single Pulse Collector Current, IC (A) 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.03 0.05 0.1 0.3 0.5 1 VCE(sat) VBE(sat) TC=25 IC=5I B 50 s 100 s 200 s 500 s PW=1ms 5 3 1 0.5 0.3 0.1 0.05 0.03 1 3 5 10 3 5 10 30 50 100 300 500 Collector Current, IC (A) Collector Emitter Voltage, VCE (V) Switching Time 3 tSTG Switching Time (s) T C=25 I C=5IB1 =5IB2 1 0.5 0.3 tON tF 0.1 0.3 0.5 1 3 5 10 Collector Current, IC (A) UTC assum es no responsibility for equipm ent failures that result from using products at values that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R214-009,B |
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